IXTP1R6N50D2
IXYS
IXYS
MOSFET N-CH 500V 1.6A TO220AB
$3.00
Available to order
Reference Price (USD)
1+
$2.29000
50+
$1.85000
100+
$1.66500
500+
$1.29500
1,000+
$1.07300
2,500+
$1.03600
Exquisite packaging
Discount
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Boost your electronic applications with IXTP1R6N50D2, a reliable Transistors - FETs, MOSFETs - Single by IXYS. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IXTP1R6N50D2 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 2.3Ohm @ 800mA, 0V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 100W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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