IXYP10N65B3D1
IXYS
IXYS
DISC IGBT XPT-GENX3 TO-220AB/FP
$3.05
Available to order
Reference Price (USD)
1+
$3.04523
500+
$3.0147777
1000+
$2.9843254
1500+
$2.9538731
2000+
$2.9234208
2500+
$2.8929685
Exquisite packaging
Discount
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The IXYP10N65B3D1 Single IGBT by IXYS sets the standard for power semiconductor excellence. Designed for applications like electric vehicles and industrial machinery, it offers high current density and minimal thermal resistance. Key benefits include easy integration, superior durability, and compliance with international certifications. Partner with IXYS for cutting-edge solutions tailored to your needs. Contact us now to discuss specifications and delivery options!
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 32 A
- Current - Collector Pulsed (Icm): 62 A
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A
- Power - Max: 160 W
- Switching Energy: 300µJ (on), 200µJ (off)
- Input Type: Standard
- Gate Charge: 20 nC
- Td (on/off) @ 25°C: 17ns/125ns
- Test Condition: 400V, 10A, 50Ohm, 15V
- Reverse Recovery Time (trr): 29 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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