SGS10N60RUFDTU
Fairchild Semiconductor
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
$1.41
Available to order
Reference Price (USD)
1+
$2.54000
10+
$2.28700
100+
$1.85190
500+
$1.53430
1,000+
$1.28355
Exquisite packaging
Discount
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The SGS10N60RUFDTU Single IGBT from Fairchild Semiconductor redefines reliability in power electronics. Tailored for renewable energy, telecom, and defense applications, it offers ultra-low switching losses and high-frequency operation. With anti-parallel diodes and short-circuit ratings, it s built for safety and performance. Fairchild Semiconductor stands behind every SGS10N60RUFDTU with unmatched customer service. Start your order process by contacting our sales team today!
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 16 A
- Current - Collector Pulsed (Icm): 30 A
- Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 10A
- Power - Max: 55 W
- Switching Energy: 141µJ (on), 215µJ (off)
- Input Type: Standard
- Gate Charge: 30 nC
- Td (on/off) @ 25°C: 15ns/36ns
- Test Condition: 300V, 10A, 20Ohm, 15V
- Reverse Recovery Time (trr): 60 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220F-3
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