LS4448GS08
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 300MA SOD80
$0.18
Available to order
Reference Price (USD)
2,500+
$0.02614
5,000+
$0.02378
12,500+
$0.02096
25,000+
$0.01908
62,500+
$0.01720
125,000+
$0.01532
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Revolutionize your power electronics with Vishay General Semiconductor - Diodes Division's LS4448GS08 Single Rectifier Diodes, offering exceptional performance and reliability. These diodes are ideal for high-frequency and high-voltage applications, including telecommunications and medical devices. With advanced features like low forward drop and high temperature operation, they set the benchmark for quality. Vishay General Semiconductor - Diodes Division provides solutions you can trust. Get started by sending us your requirements!
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 75 V
- Current - Average Rectified (Io): 150mA
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 8 ns
- Current - Reverse Leakage @ Vr: 25 nA @ 20 V
- Capacitance @ Vr, F: 4pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-80 Variant
- Supplier Device Package: SOD-80 QuadroMELF
- Operating Temperature - Junction: 175°C (Max)
Related Products
NTE Electronics, Inc
NTE605A
Vishay General Semiconductor - Diodes Division
VS-HFA04SD60SRHM3
Vishay General Semiconductor - Diodes Division
SE12DB-M3/I
Global Power Technology-GPT
G4S06510HT
Panjit International Inc.
S8K_R1_00001
Vishay General Semiconductor - Diodes Division
S1M-M3/61T
Panjit International Inc.
SX34-AU_R1_000A1
Microchip Technology
JAN1N6622US/TR
Vishay General Semiconductor - Diodes Division
VS-8EVH06HM3/I
Taiwan Semiconductor Corporation