LSIC1MO120E0120
Littelfuse Inc.
Littelfuse Inc.
SICFET N-CH 1200V 27A TO247-3
$16.81
Available to order
Reference Price (USD)
1+
$14.74000
10+
$13.40000
25+
$12.39520
100+
$11.39000
450+
$10.38500
900+
$9.38000
Exquisite packaging
Discount
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Optimize your electronic systems with LSIC1MO120E0120, a high-quality Transistors - FETs, MOSFETs - Single from Littelfuse Inc.. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, LSIC1MO120E0120 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 20V
- Vgs(th) (Max) @ Id: 4V @ 7mA
- Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 20 V
- Vgs (Max): +22V, -6V
- Input Capacitance (Ciss) (Max) @ Vds: 1125 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 139W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD
- Package / Case: TO-247-3
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