MS2200
Microsemi Corporation
Microsemi Corporation
RF TRANS NPN 65V 500MHZ M102
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Designed for the future, Microsemi Corporation's MS2200 RF BJT transistors deliver cutting-edge technology in a proven package. Features include gold metallization for reliable contacts and TO-39 enclosures for durability. Perfect for phased-array antennas and microwave links. Your innovation starts here reach out for expert consultation today!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 65V
- Frequency - Transition: 400MHz ~ 500MHz
- Noise Figure (dB Typ @ f): -
- Gain: 9.7dB
- Power - Max: 1167W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
- Current - Collector (Ic) (Max): 43.2A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: M102
- Supplier Device Package: M102
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