MSCSM120DDUM31CTBL2NG
Microchip Technology
Microchip Technology
PM-MOSFET-SIC-SBD-BL2
$313.41
Available to order
Reference Price (USD)
1+
$313.41000
500+
$310.2759
1000+
$307.1418
1500+
$304.0077
2000+
$300.8736
2500+
$297.7395
Exquisite packaging
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Discover high-performance MSCSM120DDUM31CTBL2NG from Microchip Technology, a leading solution in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are designed for efficiency and reliability, making them ideal for various electronic applications. Features include low power consumption, high switching speed, and excellent thermal stability. Perfect for power management, amplification, and switching circuits. Contact us today for a quote and let Microchip Technology s MSCSM120DDUM31CTBL2NG enhance your projects with superior quality and performance.
Specifications
- Product Status: Active
- FET Type: 4 N-Channel, Common Source
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 79A
- Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
- Power - Max: 310W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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