NDD04N50ZT4G
onsemi
onsemi
MOSFET N-CH 500V 3A DPAK
$0.36
Available to order
Reference Price (USD)
1+
$0.36000
500+
$0.3564
1000+
$0.3528
1500+
$0.3492
2000+
$0.3456
2500+
$0.342
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose NDD04N50ZT4G by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with NDD04N50ZT4G inquire now for more details!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 308 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 61W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Rohm Semiconductor
SCT4026DW7HRTL
STMicroelectronics
STL210N4F7AG
onsemi
NTMT150N65S3HF
onsemi
NTD4809NH-35G
Vishay Siliconix
SQM10250E_GE3
onsemi
NVTFS6H860NTAG
STMicroelectronics
STW56N65DM2
Vishay Siliconix
SIHG17N80E-GE3
Infineon Technologies
BSZ0704LSATMA1
Toshiba Semiconductor and Storage