NE58219-T1-A
Renesas
Renesas
NPN SILICON AMPLIFIER AND OSCILL
$0.80
Available to order
Reference Price (USD)
1+
$0.80000
500+
$0.792
1000+
$0.784
1500+
$0.776
2000+
$0.768
2500+
$0.76
Exquisite packaging
Discount
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Designed for the future, Renesas's NE58219-T1-A RF BJT transistors deliver cutting-edge technology in a proven package. Features include gold metallization for reliable contacts and TO-39 enclosures for durability. Perfect for phased-array antennas and microwave links. Your innovation starts here reach out for expert consultation today!
Specifications
- Product Status: Last Time Buy
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 5GHz
- Noise Figure (dB Typ @ f): -
- Gain: 5dB
- Power - Max: 100mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
- Current - Collector (Ic) (Max): 60mA
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SC-75 (USM)
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