RGT8NL65DGTL
Rohm Semiconductor
Rohm Semiconductor
FIELD STOP TRENCH IGBT
$2.13
Available to order
Reference Price (USD)
1+
$2.13000
500+
$2.1087
1000+
$2.0874
1500+
$2.0661
2000+
$2.0448
2500+
$2.0235
Exquisite packaging
Discount
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Discover high-performance RGT8NL65DGTL Single IGBTs from Rohm Semiconductor, designed for efficient power management in various industrial applications. These transistors offer superior switching capabilities and thermal performance, making them ideal for motor drives, renewable energy systems, and power supplies. Features include low saturation voltage, high current capacity, and robust construction. Whether you're upgrading existing systems or designing new solutions, RGT8NL65DGTL ensures reliability and efficiency. Contact us today for pricing and technical support!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 8 A
- Current - Collector Pulsed (Icm): 12 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
- Power - Max: 65 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 13.5 nC
- Td (on/off) @ 25°C: 17ns/69ns
- Test Condition: 400V, 4A, 50Ohm, 15V
- Reverse Recovery Time (trr): 40 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: LPDS
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