NGTB40N65FL2WG
onsemi
onsemi
IGBT TRENCH/FS 650V 80A TO247
$5.67
Available to order
Reference Price (USD)
1+
$5.51000
30+
$4.67767
120+
$4.05408
510+
$3.45114
1,020+
$2.91060
Exquisite packaging
Discount
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The NGTB40N65FL2WG Single IGBT from onsemi delivers unmatched performance in power conversion and control. Ideal for UPS systems, induction heating, and industrial automation, this transistor combines high efficiency with rugged reliability. Features such as short-circuit protection and low EMI make it a standout choice. onsemi's commitment to innovation ensures NGTB40N65FL2WG meets the demands of modern electronics. Get in touch for bulk orders and customization options!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
- Power - Max: 366 W
- Switching Energy: 970µJ (on), 440µJ (off)
- Input Type: Standard
- Gate Charge: 170 nC
- Td (on/off) @ 25°C: 84ns/177ns
- Test Condition: 400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): 72 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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