NGTB40N65IHL2WG
onsemi
onsemi
IGBT TRENCH/FS 650V 80A TO247-3
$4.58
Available to order
Reference Price (USD)
1+
$4.97000
30+
$4.24267
120+
$3.69783
510+
$3.17110
1,020+
$2.69879
Exquisite packaging
Discount
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Enhance your electronic designs with NGTB40N65IHL2WG Single IGBTs from onsemi, built for high-power applications. Perfect for wind turbines, traction systems, and power tools, these transistors provide reliable performance under extreme conditions. Features like overcurrent protection and high-temperature operation ensure safety and efficiency. onsemi's expertise guarantees top-tier components for your critical projects. Reach out today for competitive pricing and technical details!
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
- Power - Max: 300 W
- Switching Energy: 360µJ (off)
- Input Type: Standard
- Gate Charge: 135 nC
- Td (on/off) @ 25°C: -/140ns
- Test Condition: 400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): 465 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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