NGTB50N120FL2WG
onsemi
onsemi
IGBT 1200V 100A 535W TO247
$11.59
Available to order
Reference Price (USD)
1+
$10.15000
30+
$8.79033
120+
$7.67933
510+
$6.73261
1,020+
$5.90940
Exquisite packaging
Discount
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Upgrade your power electronics with NGTB50N120FL2WG Single IGBTs by onsemi, engineered for precision and durability. Perfect for inverters, welding equipment, and automotive applications, these transistors provide fast switching speeds and excellent thermal stability. Key features include high voltage tolerance, low power loss, and compact design. Trust onsemi for top-quality components that meet global standards. Request a quote now to learn more about how NGTB50N120FL2WG can enhance your projects.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
- Power - Max: 535 W
- Switching Energy: 4.4mJ (on), 1.4mJ (off)
- Input Type: Standard
- Gate Charge: 311 nC
- Td (on/off) @ 25°C: 118ns/282ns
- Test Condition: 600V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr): 256 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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