NSBC114TDP6T5G
onsemi
onsemi
TRANS PREBIAS 2NPN 50V SOT963
$0.05
Available to order
Reference Price (USD)
8,000+
$0.07267
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-quality NSBC114TDP6T5G Bipolar Junction Transistor (BJT) Arrays from onsemi, designed for reliable performance in various electronic applications. These pre-biased transistor arrays offer excellent switching and amplification capabilities, making them ideal for compact circuit designs. Common applications include signal processing, driver circuits, and load switching in consumer electronics, industrial controls, and automotive systems. Features include matched pairs for consistent performance, low saturation voltage, and thermal stability. Upgrade your electronic projects with onsemi's precision-engineered components. Contact us today for pricing and availability submit your inquiry now!
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 339mW
- Mounting Type: Surface Mount
- Package / Case: SOT-963
- Supplier Device Package: SOT-963
Related Products
Panasonic Electronic Components
DMC566030R
Panasonic Electronic Components
XP0121400L
Nexperia USA Inc.
PEMD30,115
onsemi
NSTB60BDW1T1G
Toshiba Semiconductor and Storage
RN1966FE(TE85L,F)
Toshiba Semiconductor and Storage
RN1905FE,LXHF(CT
onsemi
NSVBC114YPDXV6T1G
Toshiba Semiconductor and Storage
RN2963(TE85L,F)
Nexperia USA Inc.
NHUMH10X
Toshiba Semiconductor and Storage