NSVBC123JDXV6T5G
onsemi
onsemi
SS SOT563 SRF MT RST XSTR
$0.11
Available to order
Reference Price (USD)
1+
$0.10844
500+
$0.1073556
1000+
$0.1062712
1500+
$0.1051868
2000+
$0.1041024
2500+
$0.103018
Exquisite packaging
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Upgrade to onsemi's premium NSVBC123JDXV6T5G BJT Arrays for unmatched performance in discrete semiconductor applications. These pre-biased transistor pairs deliver consistent results in amplification and switching tasks, featuring optimized base-emitter resistors for immediate circuit integration. Perfect for use in voltage regulators, relay drivers, and signal conditioning circuits within consumer electronics and embedded systems. The product line boasts high power dissipation, wide operating temperature ranges, and moisture-resistant packaging. As an industry leader, onsemi provides technical documentation and design support for all NSVBC123JDXV6T5G applications. Start your order process submit an inquiry to receive customized solutions!
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 2.2kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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