NTD23N03R-1G
onsemi
onsemi
MOSFET N-CH 25V 3.8A/17.1A IPAK
$0.12
Available to order
Reference Price (USD)
1+
$0.12000
500+
$0.1188
1000+
$0.1176
1500+
$0.1164
2000+
$0.1152
2500+
$0.114
Exquisite packaging
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Enhance your circuit performance with NTD23N03R-1G, a premium Transistors - FETs, MOSFETs - Single from onsemi. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust NTD23N03R-1G for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 17.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
- Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.76 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 1.14W (Ta), 22.3W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-PAK
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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