NTD6600N-1G
onsemi
onsemi
MOSFET N-CH 100V 12A IPAK
$0.41
Available to order
Reference Price (USD)
1+
$0.41000
500+
$0.4059
1000+
$0.4018
1500+
$0.3977
2000+
$0.3936
2500+
$0.3895
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with NTD6600N-1G, a high-quality Transistors - FETs, MOSFETs - Single from onsemi. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, NTD6600N-1G provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 146mOhm @ 6A, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.28W (Ta), 56.6W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-PAK
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Related Products
Alpha & Omega Semiconductor Inc.
AON6407
Infineon Technologies
BSO051N03MS G
onsemi
NDS356AP
Vishay Siliconix
SQJA72EP-T1_GE3
Yangzhou Yangjie Electronic Technology Co.,Ltd
YJG15N15B-F1-0100HF
Nexperia USA Inc.
BUK764R4-60E,118
Sanyo
MCH6424-TL-E
Toshiba Semiconductor and Storage
TK10A55D(STA4,Q,M)
Toshiba Semiconductor and Storage
TK14G65W5,RQ
Infineon Technologies