NTE2973
NTE Electronics, Inc
NTE Electronics, Inc
MOSFET-N-CHAN ENHANCEMENT TO-3P
$14.64
Available to order
Reference Price (USD)
1+
$14.64000
500+
$14.4936
1000+
$14.3472
1500+
$14.2008
2000+
$14.0544
2500+
$13.908
Exquisite packaging
Discount
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NTE Electronics, Inc presents NTE2973, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, NTE2973 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 850mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 275W (Tc)
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
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