NTMFS5H600NLT1G
onsemi
onsemi
MOSFET N-CH 60V 35A/250A 5DFN
$8.44
Available to order
Reference Price (USD)
1+
$8.44000
500+
$8.3556
1000+
$8.2712
1500+
$8.1868
2000+
$8.1024
2500+
$8.018
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose NTMFS5H600NLT1G by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with NTMFS5H600NLT1G inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 250A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3.3W (Ta), 160W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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