NTMFSC4D2N10MC
onsemi
onsemi
MOSFET N-CH 100V 29.6A/116A 8DFN
$3.92
Available to order
Reference Price (USD)
1+
$3.92000
500+
$3.8808
1000+
$3.8416
1500+
$3.8024
2000+
$3.7632
2500+
$3.724
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose NTMFSC4D2N10MC by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with NTMFSC4D2N10MC inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 29.6A (Ta), 116A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 4.3mOhm @ 44A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2856 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 7.9W (Ta), 122W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (5x6.15)
- Package / Case: 8-PowerVDFN
Related Products
Vishay Siliconix
IRFZ34SPBF
Infineon Technologies
IRFB3006GPBF
Nexperia USA Inc.
PSMN3R5-80YSFX
Fairchild Semiconductor
FCU4300N80Z
Rohm Semiconductor
SCT4026DEHRC11
Infineon Technologies
BSO303SPH
Vishay Siliconix
SIHB21N60EF-GE3
Vishay Siliconix
SUP50020EL-GE3
Toshiba Semiconductor and Storage
SSM3J374R,LF
Fairchild Semiconductor