NTMSD2P102R2
onsemi
onsemi
MOSFET P-CH 20V 2.3A 8SOIC
$0.19
Available to order
Reference Price (USD)
2,500+
$0.44010
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of NTMSD2P102R2, a premium Transistors - FETs, MOSFETs - Single from onsemi. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, NTMSD2P102R2 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 90mOhm @ 2.4A, 4.5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 16 V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Vishay Siliconix
SQJA90EP-T1_GE3
STMicroelectronics
STW70N65DM6
Nexperia USA Inc.
BUK663R2-40C,118
Vishay Siliconix
SQD40020EL_GE3
Infineon Technologies
SPU02N60C3BKMA1
Diodes Incorporated
DMN62D0SFD-7
Vishay Siliconix
IRFP360PBF
STMicroelectronics
STB140NF75T4
Nexperia USA Inc.
BUK9Y8R5-80EX
Microchip Technology