NVMFS5C677NLWFT1G
onsemi
onsemi
MOSFET N-CH 60V 11A/36A 5DFN
$0.76
Available to order
Reference Price (USD)
1,500+
$0.40269
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
NVMFS5C677NLWFT1G by onsemi is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, NVMFS5C677NLWFT1G ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 37W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
Related Products
Renesas Electronics America Inc
UPA2700GR-E1-A
Infineon Technologies
IRFP7537PBF
NXP USA Inc.
BUK754R0-40C,127
Renesas Electronics America Inc
NP179N04TUK-E1-AY
EPC
EPC2053
Toshiba Semiconductor and Storage
TK33S10N1L,LXHQ
Vishay Siliconix
SQJ443EP-T2_GE3
Alpha & Omega Semiconductor Inc.
AOC2421
Infineon Technologies
BSZ018N04LS6ATMA1
STMicroelectronics