NVMFS6H836NLT1G
onsemi
onsemi
MOSFET N-CH 80V 16A/77A 5DFN
$0.64
Available to order
Reference Price (USD)
1+
$0.63756
500+
$0.6311844
1000+
$0.6248088
1500+
$0.6184332
2000+
$0.6120576
2500+
$0.605682
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose NVMFS6H836NLT1G by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with NVMFS6H836NLT1G inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 77A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2V @ 95µA
- Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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