NVTYS006N06CLTWG
onsemi
onsemi
T6 60V N-CH LL IN LFPAK33
$0.95
Available to order
Reference Price (USD)
1+
$0.95040
500+
$0.940896
1000+
$0.931392
1500+
$0.921888
2000+
$0.912384
2500+
$0.90288
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose NVTYS006N06CLTWG by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with NVTYS006N06CLTWG inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 71A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6.8mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id: 2V @ 53µA
- Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.2W (Ta), 63W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-LFPAK
- Package / Case: SOT-1205, 8-LFPAK56
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