NX3008NBKV,115
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET 2N-CH 30V 400MA SOT666
$0.44
Available to order
Reference Price (USD)
4,000+
$0.07700
8,000+
$0.06930
12,000+
$0.06160
28,000+
$0.05775
100,000+
$0.05005
200,000+
$0.04928
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic circuits with Nexperia USA Inc. s NX3008NBKV,115, a key player in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are celebrated for their high efficiency, compact design, and long-lasting performance. Key features include fast switching, low threshold voltage, and superior thermal conductivity. Ideal for applications in power converters, RF amplifiers, and battery management systems. Reach out to us today to explore how NX3008NBKV,115 can elevate your design and operational efficiency.
Specifications
- Product Status: Not For New Designs
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 400mA
- Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
- Power - Max: 500mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-666
Related Products
Microchip Technology
APTM10AM02FG
Sanyo
CPH5616-TL-E
Diodes Incorporated
DMG8822UTS-13
Alpha & Omega Semiconductor Inc.
AON6994
Vishay Siliconix
SI9945BDY-T1-GE3
Diodes Incorporated
ZXMHC6A07T8TA
Taiwan Semiconductor Corporation
TSM4953DCS RLG
Diodes Incorporated
ZXMN3AM832TA
onsemi
NTHD4502NT1
Renesas Electronics America Inc