P3M06120K3
PN Junction Semiconductor
PN Junction Semiconductor
SICFET N-CH 650V 27A TO-247-3
$9.05
Available to order
Reference Price (USD)
1+
$9.05000
500+
$8.9595
1000+
$8.869
1500+
$8.7785
2000+
$8.688
2500+
$8.5975
Exquisite packaging
Discount
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PN Junction Semiconductor presents P3M06120K3, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, P3M06120K3 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 27A
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 158mOhm @ 10A, 15V
- Vgs(th) (Max) @ Id: 2.2V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +20V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 131W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3L
- Package / Case: TO-247-3
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