P3M12040G7
PN Junction Semiconductor
PN Junction Semiconductor
SICFET N-CH 1200V 69A TO-263-7
$20.98
Available to order
Reference Price (USD)
1+
$20.98000
500+
$20.7702
1000+
$20.5604
1500+
$20.3506
2000+
$20.1408
2500+
$19.931
Exquisite packaging
Discount
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Optimize your electronic systems with P3M12040G7, a high-quality Transistors - FETs, MOSFETs - Single from PN Junction Semiconductor. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, P3M12040G7 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 69A
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 53mOhm @ 40A, 15V
- Vgs(th) (Max) @ Id: 2.2V @ 40mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +19V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 357W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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