Shopping cart

Subtotal: $0.00

PJF2NA1K_T0_00001

Panjit International Inc.
PJF2NA1K_T0_00001 Preview
Panjit International Inc.
1000V N-CHANNEL MOSFET
$1.06
Available to order
Reference Price (USD)
1+
$1.06000
500+
$1.0494
1000+
$1.0388
1500+
$1.0282
2000+
$1.0176
2500+
$1.007
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 9Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 39W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ITO-220AB
  • Package / Case: TO-220-3 Full Pack

Related Products

Toshiba Semiconductor and Storage

TK7S10N1Z,LXHQ

Vishay Siliconix

IRFPE40PBF

Toshiba Semiconductor and Storage

SSM3K341TU,LXHF

STMicroelectronics

STU2N62K3

Infineon Technologies

BSZ039N06NSATMA1

Renesas Electronics America Inc

2SK3115-AZ

Infineon Technologies

SPW16N50C3FKSA1

Top