PJF4NA50A_T0_00001
Panjit International Inc.
Panjit International Inc.
500V N-CHANNEL MOSFET
$0.82
Available to order
Reference Price (USD)
1+
$0.82000
500+
$0.8118
1000+
$0.8036
1500+
$0.7954
2000+
$0.7872
2500+
$0.779
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
PJF4NA50A_T0_00001 by Panjit International Inc. is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, PJF4NA50A_T0_00001 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 449 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 42W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ITO-220AB
- Package / Case: TO-220-3 Full Pack
Related Products
IXYS
IXTX110N20L2
STMicroelectronics
STP8N120K5
Vishay Siliconix
SIHP18N60E-GE3
NXP USA Inc.
BSP225/S911115
GeneSiC Semiconductor
G2R1000MT17J
Toshiba Semiconductor and Storage
SSM6P16FE(TE85L,F)
Infineon Technologies
IPB090N06N3GATMA1
Infineon Technologies
IPB65R110CFDAATMA1
Fairchild Semiconductor
FQI4N90TU
Vishay Siliconix