PJF60R290E_T0_00001
Panjit International Inc.
Panjit International Inc.
600V N-CHANNEL SUPER JUNCTION MO
$2.54
Available to order
Reference Price (USD)
1+
$2.54000
500+
$2.5146
1000+
$2.4892
1500+
$2.4638
2000+
$2.4384
2500+
$2.413
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with PJF60R290E_T0_00001, a reliable Transistors - FETs, MOSFETs - Single by Panjit International Inc.. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, PJF60R290E_T0_00001 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta), 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1013 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ITO-220AB
- Package / Case: TO-220-3 Full Pack
Related Products
onsemi
NTMFS5C450NT1G
Toshiba Semiconductor and Storage
SSM6K403TU,LF
Infineon Technologies
BSO203SPHXUMA1
onsemi
FDS86252
onsemi
FDMC86240
Diodes Incorporated
DMP32D9UFZ-7B
Vishay Siliconix
SIS472DN-T1-GE3
Renesas Electronics America Inc
RJK6026DPP-B1#T2F
Diodes Incorporated
DMN3066L-7
Infineon Technologies