PMCM6501VPEZ
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET P-CH 12V 6.2A 6WLCSP
$0.62
Available to order
Reference Price (USD)
4,500+
$0.28113
9,000+
$0.26531
13,500+
$0.24949
31,500+
$0.23842
Exquisite packaging
Discount
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Discover high-performance PMCM6501VPEZ from Nexperia USA Inc., a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, PMCM6501VPEZ delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29.4 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 556mW (Ta), 12.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-WLCSP (1.48x0.98)
- Package / Case: 6-XFBGA, WLCSP
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