Shopping cart

Subtotal: $0.00

PMN16XNEX

Nexperia USA Inc.
PMN16XNEX Preview
Nexperia USA Inc.
MOSFET N-CH 20V 6.9A 6TSOP
$0.40
Available to order
Reference Price (USD)
3,000+
$0.18482
6,000+
$0.17497
15,000+
$0.16513
30,000+
$0.15331
75,000+
$0.14839
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 19mOhm @ 6.9A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 1136 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 550mW (Ta), 6.25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457

Related Products

Vishay Siliconix

SQ4064EY-T1_GE3

Infineon Technologies

AUIRFS4115TRL

Toshiba Semiconductor and Storage

TK35A08N1,S4X

Vishay Siliconix

SQ3427EV-T1_GE3

Fairchild Semiconductor

FDMS8570SDC

Infineon Technologies

SPW47N65C3FKSA1

Nexperia USA Inc.

BUK7M12-60EX

Panjit International Inc.

PJD16N06A-AU_L2_000A1

Renesas Electronics America Inc

UPA2713GR-E1-A

Top