PMPB29XPEAX
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET P-CH 20V 5A DFN2020MD-6
$0.49
Available to order
Reference Price (USD)
3,000+
$0.20997
6,000+
$0.19815
15,000+
$0.18634
30,000+
$0.17807
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with PMPB29XPEAX by Nexperia USA Inc., a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, PMPB29XPEAX ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 32.5mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 2970 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN2020MD-6
- Package / Case: 6-UDFN Exposed Pad
Related Products
Diodes Incorporated
DMN2004K-7
Microchip Technology
APT10M09LVFRG
Rohm Semiconductor
R6030KNX
Renesas Electronics America Inc
2SK1582-T1B-A
Alpha & Omega Semiconductor Inc.
AOTF15S65L
Infineon Technologies
IPP019N08NF2SAKMA1
Vishay Siliconix
SIHW47N60E-GE3
NXP USA Inc.
PMZB300XN,315
Infineon Technologies
AUIRF4104S
Microchip Technology