Shopping cart

Subtotal: $0.00

PMV25ENEAR

Nexperia USA Inc.
PMV25ENEAR Preview
Nexperia USA Inc.
MOSFET N-CH 30V 5.5A TO236AB
$0.13
Available to order
Reference Price (USD)
3,000+
$0.17759
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 24mOhm @ 5.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 597 pF @ 15 V
  • FET Feature: -
  • Power Dissipation (Max): 460mW (Ta), 6.94W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-236AB
  • Package / Case: TO-236-3, SC-59, SOT-23-3

Related Products

Vishay Siliconix

SI7463DP-T1-GE3

Infineon Technologies

SPD07N60C3ATMA1

Taiwan Semiconductor Corporation

TSM2N60ECP ROG

Vishay Siliconix

SUM60N10-17-E3

Infineon Technologies

IRF60DM206

Renesas Electronics America Inc

2SJ128-AZ

Alpha & Omega Semiconductor Inc.

AOW360A70

Vishay Siliconix

SIHB100N60E-GE3

Vishay Siliconix

SUM65N20-30-E3

Top