Shopping cart

Subtotal: $0.00

PMV32UP,215

Nexperia USA Inc.
PMV32UP,215 Preview
Nexperia USA Inc.
MOSFET P-CH 20V 4A TO236AB
$0.61
Available to order
Reference Price (USD)
3,000+
$0.26002
6,000+
$0.24539
15,000+
$0.23076
30,000+
$0.22051
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 2.4A, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 4.5 V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 510mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-236AB
  • Package / Case: TO-236-3, SC-59, SOT-23-3

Related Products

Alpha & Omega Semiconductor Inc.

AOTF12N60L

Rectron USA

RM3407

Infineon Technologies

BSZ0994NSATMA1

Diodes Incorporated

DMT8012LSS-13

Nexperia USA Inc.

PMPB50ENEX

Fairchild Semiconductor

FDU6682_NL

Infineon Technologies

SPW11N60CFDFKSA1

STMicroelectronics

STB13NK60ZT4

Top