PRMH2Z
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS 2NPN 50V DFN1412-6
$0.37
Available to order
Reference Price (USD)
5,000+
$0.05060
10,000+
$0.04301
25,000+
$0.04048
50,000+
$0.03795
125,000+
$0.03289
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Introducing Nexperia USA Inc.'s PRMH2Z advanced Pre-Biased Transistor Arrays engineered for modern electronics. These BJT arrays provide ready-to-use solutions with internal resistor networks, significantly reducing design complexity and BOM costs. Application highlights include power supply circuits, display drivers, and microcontroller interfaces in automotive, aerospace, and industrial environments. Technical features comprise low VCE(sat), tight current gain matching, and RoHS compliance for environmental safety. Nexperia USA Inc. stands behind every PRMH2Z unit with rigorous quality testing. Streamline your procurement process contact our sales team via the inquiry form for personalized assistance!
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: 230MHz
- Power - Max: 480mW
- Mounting Type: Surface Mount
- Package / Case: 6-XFDFN Exposed Pad
- Supplier Device Package: DFN1412-6
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