PSMN2R7-30BL,118
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 30V 100A D2PAK
$1.94
Available to order
Reference Price (USD)
800+
$0.81769
1,600+
$0.73887
2,400+
$0.68961
5,600+
$0.65513
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Nexperia USA Inc. presents PSMN2R7-30BL,118, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, PSMN2R7-30BL,118 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2.15V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3954 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 170W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
onsemi
FDPF16N50T
Infineon Technologies
IPD65R1K4CFDATMA2
onsemi
NTB35N15T4G
Vishay Siliconix
SI7450DP-T1-E3
Vishay Siliconix
SQD40131EL_GE3
Diodes Incorporated
DMP21D0UFD-7
Nexperia USA Inc.
PSMN5R2-60YLX
Fairchild Semiconductor
FQB9N08TM
Alpha & Omega Semiconductor Inc.
AOTF12T60PL
Infineon Technologies