PSMN3R0-30MLC,115
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 30V 70A LFPAK33
$1.22
Available to order
Reference Price (USD)
1,500+
$0.37945
3,000+
$0.34388
7,500+
$0.32017
10,500+
$0.30831
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
PSMN3R0-30MLC,115 by Nexperia USA Inc. is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, PSMN3R0-30MLC,115 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.15mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2.15V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 88W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK33
- Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Related Products
onsemi
FDMS86105
Microchip Technology
VN0300L-G-P002
Renesas Electronics America Inc
UPA1724G-E1-A
Renesas Electronics America Inc
UPA1804GR-9JG-E1-A
Infineon Technologies
IAUS300N08S5N014TATMA1
STMicroelectronics
STP9NM60N
IXYS
IXTA08N100D2-TRL
Infineon Technologies
IPB65R310CFDATMA2
Rohm Semiconductor
RD3L150SNFRATL
Nexperia USA Inc.