R6504KND3TL1
Rohm Semiconductor
Rohm Semiconductor
HIGH-SPEED SWITCHING, NCH 650V 4
$1.63
Available to order
Reference Price (USD)
1+
$1.63000
500+
$1.6137
1000+
$1.5974
1500+
$1.5811
2000+
$1.5648
2500+
$1.5485
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose R6504KND3TL1 by Rohm Semiconductor. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with R6504KND3TL1 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 58W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Infineon Technologies
IPA65R380E6XKSA1
Panjit International Inc.
PJL9417_R2_00001
Infineon Technologies
IPZ60R099P6FKSA1
Infineon Technologies
IPU80R1K4P7AKMA1
Infineon Technologies
IRF540ZLPBF
STMicroelectronics
STP80NF70
Infineon Technologies
IRLHS2242TRPBF
Fairchild Semiconductor
ISL9N302AS3ST
Vishay Siliconix
SQD25N06-22L_GE3
GaNPower