RD3P08BBDTL
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 100V 80A TO252
$3.20
Available to order
Reference Price (USD)
1+
$3.20000
500+
$3.168
1000+
$3.136
1500+
$3.104
2000+
$3.072
2500+
$3.04
Exquisite packaging
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Experience the power of RD3P08BBDTL, a premium Transistors - FETs, MOSFETs - Single from Rohm Semiconductor. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, RD3P08BBDTL is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 11.6mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 119W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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