RFD8P06LE
Fairchild Semiconductor
Fairchild Semiconductor
P-CHANNEL POWER MOSFET
$0.30
Available to order
Reference Price (USD)
1+
$0.30000
500+
$0.297
1000+
$0.294
1500+
$0.291
2000+
$0.288
2500+
$0.285
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Fairchild Semiconductor presents RFD8P06LE, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, RFD8P06LE delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 5V
- Rds On (Max) @ Id, Vgs: 300mOhm @ 8A, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 48W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-PAK
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Related Products
Vishay Siliconix
SQJQ402E-T1_GE3
STMicroelectronics
STB19NF20
Nexperia USA Inc.
BUK7Y2R5-40HX
onsemi
FDMC8360L
Rohm Semiconductor
RS1E350BNTB
onsemi
FDC654P
Microchip Technology
APT58F50J
Toshiba Semiconductor and Storage
SSM3K62TU,LF
Microchip Technology
TN0106N3-G-P013
Diodes Incorporated