RGTV00TS65DGC11
Rohm Semiconductor

Rohm Semiconductor
650V 50A FIELD STOP TRENCH IGBT
$7.27
Available to order
Reference Price (USD)
1+
$6.36000
10+
$5.71200
25+
$5.40000
100+
$4.68000
450+
$4.44000
900+
$3.98400
1,350+
$3.36000
Exquisite packaging
Discount
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Optimize power control with RGTV00TS65DGC11 Single IGBTs from Rohm Semiconductor, a leader in semiconductor solutions. Suited for medical equipment, aerospace, and consumer electronics, these transistors deliver precise switching and minimal noise. Highlights include high input impedance, scalable power ratings, and RoHS compliance. Rohm Semiconductor ensures RGTV00TS65DGC11 meets rigorous performance benchmarks. Inquire today to find the perfect fit for your application!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 95 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
- Power - Max: 276 W
- Switching Energy: 1.17mJ (on), 940µJ (off)
- Input Type: Standard
- Gate Charge: 104 nC
- Td (on/off) @ 25°C: 41ns/142ns
- Test Condition: 400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr): 102 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N