RGTV00TS65GC11
Rohm Semiconductor
Rohm Semiconductor
650V 50A FIELD STOP TRENCH IGBT
$6.24
Available to order
Reference Price (USD)
1+
$4.90000
10+
$4.40300
25+
$4.16240
100+
$3.60750
450+
$3.42251
900+
$3.07100
1,350+
$2.59000
Exquisite packaging
Discount
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The RGTV00TS65GC11 Single IGBT from Rohm Semiconductor redefines reliability in power electronics. Tailored for renewable energy, telecom, and defense applications, it offers ultra-low switching losses and high-frequency operation. With anti-parallel diodes and short-circuit ratings, it s built for safety and performance. Rohm Semiconductor stands behind every RGTV00TS65GC11 with unmatched customer service. Start your order process by contacting our sales team today!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 95 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
- Power - Max: 276 W
- Switching Energy: 1.17mJ (on), 940µJ (off)
- Input Type: Standard
- Gate Charge: 104 nC
- Td (on/off) @ 25°C: 41ns/142ns
- Test Condition: 400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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