RGTV80TK65DGVC11
Rohm Semiconductor
Rohm Semiconductor
2US SHORT-CIRCUIT TOLERANCE, 650
$7.10
Available to order
Reference Price (USD)
1+
$7.10000
500+
$7.029
1000+
$6.958
1500+
$6.887
2000+
$6.816
2500+
$6.745
Exquisite packaging
Discount
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The RGTV80TK65DGVC11 Single IGBT from Rohm Semiconductor redefines reliability in power electronics. Tailored for renewable energy, telecom, and defense applications, it offers ultra-low switching losses and high-frequency operation. With anti-parallel diodes and short-circuit ratings, it s built for safety and performance. Rohm Semiconductor stands behind every RGTV80TK65DGVC11 with unmatched customer service. Start your order process by contacting our sales team today!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 39 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
- Power - Max: 85 W
- Switching Energy: 1.02mJ (on), 710µJ (off)
- Input Type: Standard
- Gate Charge: 81 nC
- Td (on/off) @ 25°C: 39ns/113ns
- Test Condition: 400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): 101 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3PFM, SC-93-3
- Supplier Device Package: TO-3PFM
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