RGWX5TS65DGC11
Rohm Semiconductor
Rohm Semiconductor
HIGH-SPEED FAST SWITCHING TYPE,
$8.56
Available to order
Reference Price (USD)
1+
$8.56000
500+
$8.4744
1000+
$8.3888
1500+
$8.3032
2000+
$8.2176
2500+
$8.132
Exquisite packaging
Discount
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The RGWX5TS65DGC11 Single IGBT from Rohm Semiconductor delivers unmatched performance in power conversion and control. Ideal for UPS systems, induction heating, and industrial automation, this transistor combines high efficiency with rugged reliability. Features such as short-circuit protection and low EMI make it a standout choice. Rohm Semiconductor's commitment to innovation ensures RGWX5TS65DGC11 meets the demands of modern electronics. Get in touch for bulk orders and customization options!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 132 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
- Power - Max: 348 W
- Switching Energy: 2.39mJ (on), 1.68mJ (off)
- Input Type: Standard
- Gate Charge: 213 nC
- Td (on/off) @ 25°C: 64ns/229ns
- Test Condition: 400V, 75A, 10Ohm, 15V
- Reverse Recovery Time (trr): 101 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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