RJH1BF6RDPQ-80#T2
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT
$7.68
Available to order
Reference Price (USD)
1+
$7.68000
500+
$7.6032
1000+
$7.5264
1500+
$7.4496
2000+
$7.3728
2500+
$7.296
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic designs with RJH1BF6RDPQ-80#T2 Single IGBTs from Renesas Electronics America Inc, built for high-power applications. Perfect for wind turbines, traction systems, and power tools, these transistors provide reliable performance under extreme conditions. Features like overcurrent protection and high-temperature operation ensure safety and efficiency. Renesas Electronics America Inc's expertise guarantees top-tier components for your critical projects. Reach out today for competitive pricing and technical details!
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1100 V
- Current - Collector (Ic) (Max): 55 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 55A
- Power - Max: 227.2 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
Related Products
Infineon Technologies
IRGB4610DPBF
Rohm Semiconductor
RGW60TS65DGC11
IXYS
IXGR55N120A3H1
Infineon Technologies
AIGB15N65H5ATMA1
STMicroelectronics
STGWA15M120DF3
Renesas Electronics America Inc
CY25CAH-8F-T13#F10
Bourns Inc.
BIDW20N60T
Infineon Technologies
IGB30N60T
Infineon Technologies
IKW75N65EL5XKSA1
Infineon Technologies