SQJ476EP-T1_BE3
Vishay Siliconix
Vishay Siliconix
N-CHANNEL 100-V (D-S) 175C MOSFE
$0.99
Available to order
Reference Price (USD)
1+
$0.99000
500+
$0.9801
1000+
$0.9702
1500+
$0.9603
2000+
$0.9504
2500+
$0.9405
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
SQJ476EP-T1_BE3 by Vishay Siliconix is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, SQJ476EP-T1_BE3 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 38mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
Vishay Siliconix
SI5468DC-T1-GE3
IXYS
IXTP20N65X2M
Fairchild Semiconductor
RFD8P06LE
Vishay Siliconix
SQJQ402E-T1_GE3
STMicroelectronics
STB19NF20
Nexperia USA Inc.
BUK7Y2R5-40HX
onsemi
FDMC8360L
Rohm Semiconductor
RS1E350BNTB
onsemi
FDC654P
Microchip Technology