RM11N800T2
Rectron USA
Rectron USA
MOSFET N-CH 800V 11A TO220-3
$1.44
Available to order
Reference Price (USD)
1+
$1.44000
500+
$1.4256
1000+
$1.4112
1500+
$1.3968
2000+
$1.3824
2500+
$1.368
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover RM11N800T2, a versatile Transistors - FETs, MOSFETs - Single solution from Rectron USA, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 420mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 188W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
Infineon Technologies
IPB026N06NATMA1
Infineon Technologies
SPD04P10PLGBTMA1
Fairchild Semiconductor
FQPF18N20V2YDTU
IXYS
IXTA160N10T
PN Junction Semiconductor
P3M12040G7
onsemi
NVH4L080N120SC1
Vishay Siliconix
SIHD240N60E-GE3
Microchip Technology
TN0604N3-G-P013
Diodes Incorporated
ZVN4306GVTA
Alpha & Omega Semiconductor Inc.