RM11N800TI
Rectron USA
Rectron USA
MOSFET N-CHANNEL 800V 11A TO220F
$1.44
Available to order
Reference Price (USD)
1+
$1.44000
500+
$1.4256
1000+
$1.4112
1500+
$1.3968
2000+
$1.3824
2500+
$1.368
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
RM11N800TI by Rectron USA is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, RM11N800TI ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 420mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 33.8W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
Related Products
UnitedSiC
UF3C120080K4S
Renesas Electronics America Inc
RJK0329DPB-01#J0
IXYS
IXFK220N17T2
Panjit International Inc.
PJA3413_R1_00001
Infineon Technologies
IPD50R2K0CEAUMA1
Vishay Siliconix
SI4425DDY-T1-GE3
Microchip Technology
APT5020BVRG
Vishay Siliconix
SIHA17N80E-GE3
STMicroelectronics
STP40N65M2
Wolfspeed, Inc.