RM15N650T2
Rectron USA
Rectron USA
MOSFET N-CH 650V 15A TO220-3
$0.92
Available to order
Reference Price (USD)
1+
$0.92000
500+
$0.9108
1000+
$0.9016
1500+
$0.8924
2000+
$0.8832
2500+
$0.874
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with RM15N650T2, a high-quality Transistors - FETs, MOSFETs - Single from Rectron USA. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, RM15N650T2 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 260mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 145W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
Rohm Semiconductor
R6524KNX3C16
Vishay Siliconix
SIHH240N60E-T1-GE3
Infineon Technologies
IRFR3303TRPBF
Taiwan Semiconductor Corporation
TSM80N400CF C0G
Vishay Siliconix
SIB406EDK-T1-GE3
Nexperia USA Inc.
BUK9M9R1-40EX
onsemi
SVD5865NLT4G
Fairchild Semiconductor
HUF76139S3ST
Infineon Technologies
IRF7480MTRPBF
STMicroelectronics